An investigation was made of the structure and mechanical behavior of twist-bonded GaAs compliant substrates. For a twist angle of less than 15º, the bonded interface was observed to contain a dense network of pure screw dislocations. For a larger twist angle, no dislocations were observed at the bonding interface. The mechanical behaviours of these compliant substructures were investigated using nano-indentation and the results were compared to those obtained for standard bulk GaAs. It appears that the nature of the interface has a great influence on the mechanical properties of these compliant substrates.

Influence of the Twist Angle on the Plasticity of the GaAs Compliant Substrates Realized by Wafer Bonding. G.Patriarche, E.Le Bourhis: Journal of Physics - Condensed Matter, 2002, 14[48], 12967-74