Indentation tests were performed at high temperatures on GaAs(011). This orientation permitted the activation of normal and inclined slip systems. Samples with 2 different thicknesses were prepared, and a wide range of loads was used. Observations at various scales were performed, including transmission electron microscopy of thin foils prepared using the focused ion-beam technique. The reverse side of the thinnest samples could be deformed by using the highest loads. The deformation was observed to be anisotropic on the reverse side as well as on the indented surface. On one side of the indentation, anisotropic climb of matter was revealed which was associated with micro-twin development. Convergent-beam electron diffraction, as well as chemical etching, permitted a rigorous determination of the polarity of the samples and of the character of the dislocations (α or β) generated by the indenter. The dislocations which extended deeper into the samples were found to be α dislocations. This was explained in terms of difference between the core reconstructions and mobilities of α and β dislocations.

Indentation-Induced Deformation of GaAs(011) at a High Temperature. L.Largeau, G.Patriarche, E.Le Bourhis, A.Rivière, J.P.Rivière: Philosophical Magazine, 2003, 83[14], 1653-73