Raman scattering and cathodoluminescence were performed to investigate the effect of dislocations on the spatial distribution of point defects and on the free electron concentration in n-type GaAs:Si. An experimentally extended increase in the free electron and (SiGaVGa)2- complex concentrations in going from the matrix to the dislocation was explained, as resulting from the formation of As precipitates around the dislocation, by using computer simulations which were based upon a diffusion–aggregation model.

Interactions of Point Defects with Dislocations in n-Type Silicon-Doped GaAs. H.Lei, H.S.Leipner, N.Engler, J.Schreiber: Journal of Physics - Condensed Matter, 2002, 14[34], 7963-71