The defects created by self-organized InAs quantum-dot growth in a GaAs matrix were investigated. Growth of the quantum dots was found to enhance strongly a tendency to inhomogeneous growth. The inhomogeneity appeared to arise from point defect clusters which were generated in the vicinity of an MBE/atomic-layer MBE interface. The point defects which were identified were characteristic of MBE and ALMBE GaAs layers. The InAs quantum-dot states and interface states were not clearly detected as they were located in a depleted layer which surrounded the point-defect clusters.

Investigation of Defects Created by Growth of InAs Quantum Dots in GaAs. L.Dózsa, Z.J.Horváth, P.Hubik, J.Kristofik, J.J.Mares, E.Gombia, P.Frigeri, R.Mosca, S.Franchi, B.Pécz, L.Dobos: Physica Status Solidi C, 2003, 0[3], 975-80