The influence of in situ photo-excitation upon defect structure generation in crystals implanted with 200keV Ar+ ions to doses of 1013, 3 x 1013 or 5 x 1013/cm2 was studied by using high-resolution X-ray diffraction and Rutherford back-scattering spectroscopy. The in situ photo-excitation was found to provide for the annihilation of Frenkel pairs that decreased the residual concentration of radiation-induced point defects. Amorphization of the damaged layer was assumed to proceed via the generation and growth of radiation-induced point-defect clusters. The vacancy- and interstitial-type clusters were spatially separated. The former were located closer to the surface than were the latter. The in situ photo-excitation was shown to hinder cluster growth and to stimulate the diffusion of interstitials towards undamaged substrate.

The Influence of in situ Photo-Excitation on Defect Structure Generation in Ar+ Implanted GaAs(001) Crystals Revealed by High-Resolution X-ray Diffraction and Rutherford Back-Scattering Spectroscopy. K.D.Chtcherbatchev, V.T.Bublik, A.S.Markevich, V.N.Mordkovich, E.Alves, N.P.Barradas, A.D.Sequeira: Journal of Physics D, 2003, 36[10A], A143-7