A ±100V square wave was applied to a Au/semi-insulating-GaAs interface in order to cause electron emission from, and capture into, deep-level defects in regions adjacent to the interface. The electric field transient which resulted from deep-level emission was studied by monitoring the positron drift velocity in the region. A deep-level transient spectrum was obtained by computing the trap emission rate as a function of temperature, and 2 peaks corresponding to EL2 (Ea = 0.81eV) and EL6 (Ea = 0.30eV) were identified.

Electron Emission from Deep Level Defects EL2 and EL6 in Semi-Insulating GaAs Observed by Positron Drift Velocity Transient Measurements. J.M.Tsia, C.C.Ling, C.D.Beling, S.Fung: Journal of Applied Physics, 2002, 92[6], 3410-2