Growth nuclei and surface defects were studied, using scanning tunneling microscopy, on a GaAs(¯1¯1¯3)B-(8x1) surface prepared by molecular beam epitaxy. As well as steps, 3 types of distortion of the (8x1) reconstructed surface were found. Firstly, there were

 
growth nuclei formed of small clusters of Ga and As atoms. Secondly, there were zig–zig-zag or zig-zag–zag irregularities in the zig-zag chains of the (8x1) reconstruction. Thirdly, complete zig-zag chains were added or removed.

Growth Nuclei and Surface Defects on GaAs(¯1¯1¯3)B. T.Suzuki, Y.Temko, K.Jacobi: Surface Science, 2002, 511[1-3], 13-22