Samples of Au/n-GaAs Schottky barrier diodes were bombarded with 70MeV N ions to fluences of 1011, 1012 or 1013/cm2. Deep-level transient spectroscopic studies of control and irradiated diodes were carried out. In diodes subjected to the a fluence of 1012/cm2, five distinctive electron trap levels (E1 to E5) were observed. The level E4 (0.552eV) was attributed to NGa anti-site defects created by the bombardment. The trap level concentrations of all of the energy levels were found to decrease up to a fluence of 1012/cm2, and to increase for a fluence of 1013/cm2.

Deep Level Transient Spectroscopic Studies of High-Energy Nitrogen-Irradiated Au/n-GaAs Schottky Barrier Diodes. P.Jayavel, J.Arokiaraj, T.Soga: Semiconductor Science and Technology, 2002, 17[9], 969-73