Defects in electron irradiated GaInP grown by molecular beam epitaxy were investigated using deep-level transient spectroscopy and positron annihilation spectroscopy. The latter measurements indicated that vacancies were introduced at a high rate. Core annihilation curves, compared with theoretical calculations, were used to identify the principal defect in n-GaInP as cation vacancies, while P vacancies were seen in both undoped and n-type GaInP. The concentrations of defects obtained by positron annihilation spectroscopy and Hall were in good agreement with each other. Deep-level transient spectroscopy gave much lower values, possibly due to assumptions in the C–V analysis. These results give support to the identification of the midgap deep level observed using deep-level transient spectroscopy in irradiated and as-grown n-type and undoped GaInP as the P vacancy.

Cation and Anion Vacancies in Proton Irradiated GaInP. J.Dekker, J.Oila, K.Saarinen, A.Tukiainen, W.Li, M.Pessa: Journal of Applied Physics, 2002, 92[10], 5942-9