Investigations of misfit dislocations in the mismatched GaInP/GaAs heterostructures were conducted by transmission electron microscopy . Ga-rich and In-rich mismatched GaInP films having various compositions in the group III sub-lattice were prepared on (001) GaAs substrates by metalorganic chemical vapor deposition. Plan-view transmission electron microscopic studies showed that most of the misfit dislocations preferentially lie along <110> directions in the GaInP/GaAs hetero-interface. In addition to the 60° mixed-type dislocations having Burgers vectors lying on (1¯11) or (¯111) planes, sessile-type dislocations with Burgers vector lying on (001) plane were also identified. Transmission electron microscopic analyses showed that pure edge dislocations were formed through the interaction of those 60° mixed-type dislocations in both Ga-rich and In-rich mismatched GaInP/GaAs heterostructures.

Characteristics of Misfit Dislocations in the GaInP/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition. J.R.Gong, S.J.Hou, S.F.Tseng: Journal of Crystal Growth, 2003, 253[1-4], 46-51