It was recalled that simulations of irradiation effects in compound semiconductors required interatomic potentials which described not only the compound phases, but also the pure constituents and defects. A systematic approach was based upon the analytical bond-order scheme for constructing such potentials, and GaN was used as an example. This potential was used to simulate defect formation, in GaN, by ion irradiation for recoils in the 200eV to 10keV energy range.

Molecular Dynamics Study of Defect Formation in GaN Cascades. J.Nord, K.Nordlund, J.Keinonen, K.Albe: Nuclear Instruments and Methods in Physics Research Section B, 2003, 202, 93-9