Near-edge X-ray absorption fine structure spectroscopy, at the N K-edge, was used to identify the signature of implantation-induced defects in the partial density of empty states in GaN which was implanted with O, Mg and Si ions. The dose range was 1014 to 1018/cm2. It was found that 2 of the implantation-induced defects introduced characteristic resonances (RL1, RL2) in the near-edge X-ray absorption fine structure spectra. The RL1 resonance appeared 1.7eV below the absorption edge. Its formation was independent of the projectile and the implantation dose, and was attributed to N interstitials. The RL2

 
resonance, which appeared at about 1.0eV above the absorption edge, was generated when the dose exceeded 1016/cm2 and was attributed to N dangling bonds.

Identification of Implantation-Induced Defects in GaN - a Near-Edge X-ray Absorption Fine Structure Study. M.Katsikini, F.Pinakidou, E.C.Paloura, W.Wesch: Applied Physics Letters, 2003, 82[10], 1556-8