A review was given of the prospects and limitations of the application of the electron-beam-induced-current technique in the study of the extended defects in GaN and related materials. The profile of the dislocation electron-beam-induced-current contrast in materials with diffusion lengths smaller than the electron range was analyzed. The simulation carried out showed that at small enough diffusion length values, the width of the dislocation contrast could decrease with increasing primary electron energy. It was demonstrated that in GaN structures the diffusion length could be estimated from the dislocation profile. The minimum defect cylinder radius which could be extracted from the electron-beam-induced-current measurements was evaluated. A pronounced

dependence of threading dislocation electron-beam induced current contrast in n-GaN on the beam current was revealed, which could be caused by the dislocation charge.

Electron-Beam Induced Current Study of Defects in GaN - Experiments and Simulation. E.B.Yakimov: Journal of Physics - Condensed Matter, 2002, 14[48], 13069-77