Details of the calculation of lattice thermal conductivity in wurtzite GaN were reported. Numerical simulations were performed for n-type wurtzite GaN with various densities of Si dopants, point defects and threading dislocations. By using the material specific model, an experimentally observed linear decrease in the room-temperature thermal conductivity with the logarithm of the carrier density was verified. The decrease was attributed mainly to an increased phonon relaxation on dopants. The calculations showed that an increase in doping density, from 1017 to 1018/cm3, led to a decrease in the thermal conductivity from

1.77 to 0.86W/cmK. It was also established that the room-temperature thermal conductivity could be limited by dislocations when their density was high (greater than 1010/cm2). The results were in good agreement with experimental data.

Thermal Conductivity of GaN Films - Effects of Impurities and Dislocations. J.Zou, D.Kotchetkov, A.A.Balandin, D.I.Florescu, F.H.Pollak: Journal of Applied Physics, 2002, 92[5], 2534-9