The structural and optical properties of freshly created and grown-in dislocations in single crystals were investigated by using Raman and cathodoluminescence microscopy. The introduction of a high density of dislocations by micro-indentation was accompanied by the generation of intrinsic point defects. A high number of VGa–impurity complexes was responsible for a decrease in the free electron concentration and an enhanced yellow luminescence around the indentation. A compressive stress, introduced by deformation, was revealed by Raman scattering and cathodoluminescence. Grown-in dislocations were decorated with a point-defect atmosphere; leading to a reduction in the free carrier concentration around the dislocation.

Raman and Cathodoluminescence Study of Dislocations in GaN. H.Lei, H.S.Leipner, J.Schreiber, J.L.Weyher, T.Wosiński, I.Grzegory: Journal of Applied Physics, 2002, 92[11], 6666-70