Low defect-density boules were produced by using hydride vapor-phase epitaxy. A growth rate of over 100μm/h permitted the growth of boules that were more than 3mm in length. Wafers which were generated from the boules were characterized by using X-ray diffraction, synchrotron white-beam X-ray transmission topography and the microscopy of etched surfaces. It was found that the dislocation density decreased with the thickness of the grown material. Samples with a dislocation density of less than 104/cm2 were produced. The high crystal quality of the GaN samples was further demonstrated by a full-width at half-maximum of 38arcsec for the GaN (00•4) double-crystal X-ray rocking curve.

Growth and Characterization of Low Defect GaN by Hydride Vapor Phase Epitaxy. X.Xu, R.P.Vaudo, C.Loria, A.Salant, G.R.Brandes, J.Chaudhuri: Journal of Crystal Growth, 2002, 246[3-4], 223-9