Production processes of electrically active defects in nominally undoped n-GaN irradiated with fast electrons were investigated. It was demonstrated that the Si impurity atoms with shallow donor states at EC-0.020eV interact with native defects neither during irradiation nor annealing at elevated temperatures. Two major kinds of defects produced by irradiation in n-GaN were revealed: donor centers at EC-0.070eV and deep acceptor centers. These defects were found to be unstable above 200C. They were attributed to vacancies on the N and Ga sub-lattices, respectively.

Shallow Donor Centers in Gallium Nitrides. V.V.Emtsev, V.Y.Davydov, K.V.Emtsev, D.S.Poloskin, G.A.Oganesyan, V.V.Kozlovskii, E.E.Haller: Physica Status Solidi C, 2003, 0[2], 601-4