Recent results on the muonium analogue of isolated H impurities in III–V nitrides were presented. The Mu+ and Mu- centers resided at sites which were anti-bonded to the N atom and the group-III atom, respectively. Stable sites for each of them lay in the channel and metastable sites lay in the cage formed by the 2H stacking of the wurtzite structure. The data implied the existence of short-lived atomic-like Mu0 states, and a shallow-donor Mu0 was observed. Characteristic energies for the motion, site-changing and charge-state transitions were deduced from zero-field depolarization data. The results implied that Mu/H diffusion depended strongly upon the charge state.

Properties of Muonium Defect Centers in III–V Nitrides. R.L.Lichti: Physica B, 2003, 326[1-4], 139-44