The metal-organic vapor phase epitaxial growth of cubic-GaN (c-GaN) layers was performed on the [1¯10]-stripe patterned GaAs (001) substrates. The surface morphology of the laterally overgrown layer was much improved with the formation of the flat (311)A surfaces as the growth proceeded. It was shown that the c-GaN layer thicker than 20μm was grown on GaAs(001) substrates with the stripe direction in [1¯10] for 1.5h. Microstructure and extended defect distribution in the laterally overgrown c-GaN films

were analyzed by transmission electron microscopy. It was found that the planar defect (stacking faults and twins) density drastically decreased at the region away from the substrate toward the top of the c-GaN stripe. On the other hand, the dislocations become dominant. The density of the dislocations was found to be lower than 108/cm2. These results suggested that the lateral overgrowth on [1¯10]-stripe-patterned GaAs (001) substrates via metal-organic vapor phase epitaxy was an efficient method for obtaining a low planar defect density c-GaN layer.

Reduction of Planar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001) Substrates by MOVPE. S.Sanorpim, E.Takuma, R.Katayama, K.Onabe, H.Ichinose, Y.Shiraki: Physica Status Solidi B, 2002, 234[3], 840-4