Electron-beam induced current investigations of GaN structures grown by metal-organic chemical vapour deposition on (00•1) sapphire substrates were carried out. It was shown that the widths of the electron-beam induced current profiles for individual extended defects could be as small as about 100nm. This width was observed to decrease with decreasing diffusion length and/or with increasing electron beam energy. The high spatial resolution was explained by the small diffusion length in the samples under study. The diffusion length was small even in structures with dislocation densities of about 108/cm3.High-Resolution Electron Beam Induced Current Study of the Defect Structure in GaN Epilayers. N.M.Shmidt, O.A.Soltanovich, A.S.Usikov, E.B.Yakimov, E.E.Zavarin: Journal of Physics - Condensed Matter, 2002, 14[48], 13285-90