Using Zn diffusion as a model case, the generation and role of extended defects formed in GaP single crystals during dopant diffusion at high temperatures were investigated extensively by methods of the analytical transmission electron microscopy of cross-sectional specimens. The temporal evolution of the defect structure and the anomalous shapes of the Zn concentration profiles depended upon the chosen diffusion parameters. A comparison with results for GaSb and GaAs indicated that the types, formation processes and other aspects of the temporal evolution of diffusion-induced defects were general phenomena in III–V semiconductors under high-concentration dopant diffusion.

Defect Formation and Dopant Diffusion in III–V Semiconductors - Zinc Diffusion in GaP. C.Jäger, W.Jäger: Journal of Physics - Condensed Matter, 2002, 14[48], 12865-70