It had recently been found that the electrochemical dissolution of an n-GaP (111) surface proceeded selectively or uniformly in an aqueous KOH solution, depending on an anodic high-voltage above 10V. The formation of whiskers, at dislocation sites of the n-GaP (111) surface that remained undissolved at an anodic voltage of 16V in 0.5kmol/m3 KOH solution, was reported here.

Formation of Whiskers at Dislocation Sites of n-Type GaP Surface during Anodic Etching. S.Sugawara, K.Saito, K.Aoki: Materials Transactions, 2003, 44[7], 1333-5