In LEC-grown GaP doped with Si, two vibrational absorption lines were found at 2175.1 and 2190.3/cm (T = 7K). These lines were attributed to H stretching modes, where H passivated SiGa donors. Uniaxial stress experiments showed that the SiGa complex responsible for the 2175.1/cm line had trigonal symmetry and was isolated passivated SiGa. The complex which produced the 2190.3/cm line had the symmetry, Cs, and also contained a BGa, with the 4 constituents located in a {110} mirror plane. Therefore, the structure of the group-IV monohydrogen complexes in GaP was different to that observed in GaAs.

Hydrogen Passivation of the SiGa Donor in GaP. W.Ulrici, B.Clerjaud, D.Côte: Physica Status Solidi B, 2003, 235[1], 102-6