Recent results for the self-diffusivities, DGa and DSb, of Ga and Sb were compared and related to earlier measurements. It was proposed that differences between the 2 sets of data were due to the higher concentrations of H impurity in the earlier samples. The experimental evidence indicated that the diffusion mechanisms associated with DGa and DSb both involved 2 parallel mechanisms. For DGa, the native defects involved were the Frenkel pair, GaiVGa, and the Ga vacancy, VGa. For DSb, one mechanism was due to the defect pair, SbiVGa, and the second to either the vacancy pair, VGaVSb, or the triple defect: VGaGaSbVGa. It was proposed that the mobilities of all of these defects, except GaiVGa, were enhanced in the presence of impurity H in the lattice. On this basis, the differences in the above data sets could be reconciled. It was also shown that measured free hole concentrations identified GaSb2- as being the residual acceptor in GaSb, and that undoped GaSb was intrinsic at diffusion annealing temperatures.

Native Defects and Self-Diffusion in GaSb. D.Shaw: Semiconductor Science and Technology, 2003, 18[7], 627-32