The formation of GaSb films on Si{111}, silica, sapphire and CdTe polycrystalline substrates was studied here by using the liquid-phase epitaxy technique. It was found that the substrates introduced dislocations, and that the generation of polycrystalline and randomly oriented films depended strongly upon the type and quality of the substrate used.

Study of Induced Structural Defects on GaSb Films Grown on Different Substrates by the Liquid-Phase Epitaxy Technique. C.M.Ruiz, J.L.Plaza, V.Bermúdez, E.Diéguez: Journal of Physics - Condensed Matter, 2002, 14[48], 12755-9