The kinetics of ion-bombardment induced damage and thermal annealing of a Ge(111) single crystal surface was studied using electron energy loss spectroscopy. The activation energy for the diffusion healing of radiation defects, formed on a Ge(111) surface bombarded with 3keV Ar+ ions, was estimated to be 0.3eV.

Diffusion Healing of the Radiation Defects During Ion Bombardment of a Ge(111) Crystal Face. N.N.Gorobe, V.E.Korsukov, A.S.Lukyanenko, R.R.Nazarov, B.A.Obidov: Technical Physics Letters, 2002, 28[4], 292-