In situ deformation experiments were performed on pure Ge. In addition to qualitative observations being made, the velocity of dislocations was measured as a function of dislocation character and length at various temperatures and stresses. The local effective stress was estimated from the curvature of the dislocations. Combining the in situ results with double-etch-pit experiments allows estimation of the mean free path of kinks. Then a set of material parameters were calculated within the framework of the Hirth–Lothe theory.

A Transmission Electron Microscopic in situ Study of Dislocation Mobility in Ge. T.Kruml, D.Caillard, C.Dupas, J.L.Martin: Journal of Physics - Condensed Matter, 2002, 14[48], 12897-902