Misfit dislocations, in [001] GeSi/Si islands grown at 700C, were investigated by using transmission electron microscopy and 30° partial misfit dislocations were found both in the island/substrate interface and near to the island surface. Since the 30° partial led the
movement of the 60° dissociated misfit dislocation in a (001) compressively strained system such as (001) GeSi/Si, a generation mechanism for misfit dislocations was proposed which involved partial misfit dislocation half-loops.

Alternative Mechanism for Misfit Dislocation Generation during High-Temperature Ge(Si)/Si (001) Island Growth. J.Zou, X.Z.Liao, D.J.H.Cockayne, Z.M.Jiang: Applied Physics Letters, 2002, 81[11], 1996-8