A cross-sectional transmission electron microscopic study was made of Cu–Pt ordering in p-type, n-type and nominally undoped InAlP and In(AlGa)P layers. These doping conditions permitted the investigation of the effect of acceptor doping with Mg, and donor doping with Te, upon removing Cu–Pt ordering in In(AlGa)P. More significant was the possibility of investigating the effect of native group-III self-diffusion in p-type,

n-type and nominally undoped InAlP and In(AlGa)P layers. The data indicated that the rapidly diffusing Mg acceptor species was less effective in removing Cu–Pt ordering than was the relatively slowly-diffusing Te donor species. Also, the results indicated that native group-III defects and group-III self-diffusion played a more important role in removing Cu–Pt ordering than did either group-II acceptor diffusion or group-VI donor diffusion.

Effect of Group II Impurity and Group III Native Defect on Disordering Cu–Pt Type Ordered Structures in In0.5(AlxGa1–x)0.5P Layers. K.L.Chang, K.C.Hsieh, P.N.Grillot, R.D.Pai, J.W.Huang, G.E.Höfler: Journal of Applied Physics, 2002, 92[11], 6582-9