Single crystals of p-type material were grown in a 3-stage vertical electric furnace by using the Bridgman method, and the quality of the grown crystal was investigated by means of X-ray diffraction and photoluminescence measurements. From the latter spectra for as-grown crystals and variously heat-treated crystals, the (D0, X) emission was deduced to be the dominant intensity in the photoluminescence spectrum of CdIn2Te4:Cd, while the (A0, X) emission completely disappeared in CdIn2Te4:Cd. However, the (A0, X) emission in the photoluminescence spectrum of CdIn2Te4:Te was the predominant intensity; as in the as-grown CdIn2Te4 crystal. The results indicated that the (D0, X) was associated with VTe, which acted as a donor, and that the (A0, X) emission was related to VCd, which acted as an acceptor. The p-type crystal was found to be converted to n-type during annealing in a Cd atmosphere. The origin of the (D0, A0) emission and its TO phonon replicas was related to interactions between donors such as VTe or Cdint, and acceptors such as VCd or Teint. The In in CdIn2Te4 was confirmed not to form native defects because it existed in a stable bonding form.

Point Defects in p-Type CdIn2Te4 Bridgman Grown Crystals. S.H.You, K.J.Hong, T.S.Jeong, C.J.Youn, J.S.Park, D.C.Shin, J.D.Moon: Journal of Crystal Growth, 2003, 256[1-2], 116-22