Equipment for selective electrochemical etching was described which was suitable for the in situ observation of defect structures. Operation of the device was demonstrated by using InGaAs/GaAs(001) hetero-epitaxial systems in which the epitaxial layer thickness was above the critical layer thickness. Using incremental layer removal, the depth profile of the dislocation density could be mapped. It was found that the measured defect density was inversely proportional to the layer thickness, and corresponded to the theoretical model.

Defect Profiling in Semiconductor Layers by the Electrochemical Method. Á.Nemcsics, J.P.Makai: Semiconductors, 2003, 37[6], 632-5