A special selective electrochemical etching-based apparatus was presented which was appropriate for the in situ observation of defects in heterostructures. The set-up was demonstrated for InGaAs/GaAs(001) hetero-epitaxial systems where the epitaxial layer thickness was above the critical layer thickness. With incremental layer removal, the depth profile of the dislocation density was mapped. The measured density of defects, which was inversely proportional to the layer thickness, was in agreement with the theoretical model.

Electrochemical Defect Profiling for Semiconductor Heterostructures. A.Nemcsics, J.P.Makai: Journal of Physics - Condensed Matter, 2002, 14[48], 13299-304