Photoluminescence and high-resolution X-ray diffraction studies of the diffusion in lattice matched InGaAs/InP quantum wells showed that at high temperatures intermixing could be modeled by Fick's law with an identical diffusion rate for both the group III and group V sub-lattices. This results in materials that remained lattice-matched for all compositions created by the diffusion. At lower temperatures, the photoluminescence showed that the diffusion process changed and high-resolution X-ray diffraction showed that strained layers were produced within the structure. This was possibly due to the presence of the miscibility gap within the InGaAsP phase diagram.

On the Diffusion of Lattice Matched InGaAs/InP Microstructures. F.Bollet, W.P.Gillin, M.Hopkinson, R.Gwilliam: Journal of Applied Physics, 2003, 93[7], 3881-5