The origin of misfit dislocations in MOVPE grown InGaP/GaAs epilayers in compression was investigated by means of TEM observations. Several <011> 60° misfit dislocations were found to be associated with stacking faults which suggested that their nucleation was heterogeneous and occurred through reaction of the Shockley partials bordering the stacking faults probably assisted by the strain energy stored in the layers. The stacking faults might have originated at growth islands. An asymmetric distribution of the misfit dislocations was also observed. It was attributed to the difference between the α- and β-types of 60° dislocations, with the α dislocations propagating easier as they have a higher mobility than the β ones.

Heterogeneous Nucleation of Misfit Dislocations in InGaP/GaAs Layers Grown by MOVPE. C.Frigeri, G.Attolini, C.Pelosi: Physica Status Solidi A, 2003, 195[1], 56-60