The annealing of implantation-induced lattice damage was studied by means of the perturbed angular correlation technique, using 181Hf(181Ta) and 111In(111Cd) probes. The perturbed angular correlation results revealed evidence of In clusters which formed easily during growth.

Defect Recovery in AlN and InN after Heavy Ion Implantation. K.Lorenz, R.Vianden: Physica Status Solidi C, 2003, 0[1], 413-6