Electron-irradiation induced defects in semi-insulating InP wafers with Fe concentration ranging from 1.5 x 1015 to 2.5 x 1015/cm3, which were obtained by multiple-step wafer annealing under P vapor pressure, were studied using a thermally stimulated current method. New traps, e1, e2, e3, e4 and e5, with activation energies of 0.22, 0.28, 0.37, 0.44 and 0.46eV, respectively, were observed. Based upon the annealing behavior of traps and the calculated defect levels, traps e1 and e5 produced by the irradiation with electron doses above 1015/cm2 were linked to InP and PIn antisite defects, respectively, that probably formed complexes. Traps e3 and e4 produced by the irradiation with doses above 1014/cm2 were associated with In and P vacancy related defects, respectively.

Thermally Stimulated Current Study of Electron-Irradiation Induced Defects in Semi-Insulating InP Obtained by Multiple-Step Wafer Annealing. K.Kuriyama, J.Takahashi, M.Okada, M.Uchida: Solid State Communications, 2003, 126[6], 309-13