Epitaxial layers of p-type InP were grown by low pressure metal-organic chemical vapour deposition using diethylzinc as the p-dopant source. Proposed Zn-associated InP point defects and experimental diethylzinc doping data were used to formulate a point-defect equilibrium model of the Zn doping process of metal-organic chemical vapour deposition InP. The model equation was contrasted with the experimental data and this comparison provided insight into the diethylzinc doping mechanism of InP on the atomic level.

Application of the Point-Defect Analysis Technique to Zinc Doping of MOCVD Indium Phosphide. A.J.Howard, B.Pathangey, Y.Hayakawa, T.J.Anderson, C.Blaauw, A.J.SpringThorpe: Semiconductor Science and Technology, 2003, 18[8],723-8