An investigation was made of the effect of implantation at room temperature and 200C into lattice matched InP/InGaAs quantum well structures capped with InP and InGaAs layers. P– ions of 20keV were implanted into the cap layer to doses of 1012 to 1014/cm2. The dose dependent evolution of shifts in photoluminescence energy for the InP capped sample was found to be affected by the implantation temperature. Rutherford back scattering measurements showed that the nature of the damage induced at different implant temperatures was responsible for this behavior. It was found that the InGaAs capped sample was less sensitive to the implant temperature than the InP capped sample.

Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells. C.Carmody, H.H.Tan, C.Jagadish: Journal of Applied Physics, 2003, 93[8], 4468-70