The effect of the type of conductivity and the doping level of InSb single crystals on the mobility of fast 60° dislocations in a magnetic field was discovered. It was found that doping of a pure InSb crystal with Te (n-type impurity) to 1018/cm3 reduces the mobility of dislocations to the background level. At the same time, in p-type InSb crystals doped with Ge with the same carrier concentration (1018/cm3), the magnetoplastic effect was manifested clearly. It was shown that preliminary mechanical loading and, hence, internal stresses in the crystal affected not only the mean path length of dislocations in a magnetic field but also the magnitude of the threshold magnetic field below which the magnetoplastic effect was not observed.

Effects of Doping and Preliminary Processing on the Magnetically Stimulated Mobility of Dislocations in InSb Single Crystals. E.A.Petrzhik, E.V.Darinskaya, S.A.Erofeeva, M.R.Raukhman: Physics of the Solid State, 2003, 45[2], 266-9