The redistribution of H during high-temperature implantation of B-pre-implanted Si was investigated. The final H distribution differed from the distribution of a control sample, and was attributed to the effect of sample preparation. Samples were prepared with a single B pre-implantation, with projected range either shallower or deeper with respect to the projected range of a subsequent elevated-temperature H implantation. For shallower B, the H redistribution was a wholesale shift in the entire distribution towards the surface, whereas for deeper B, partial redistribution of end-of-range H towards the bulk was observed. Self-implantation experiments showed that the wholesale H redistribution was not due solely to B pre-implantation damage to the Si lattice, but was driven by chemical effects attributed to the presence of B.

Boron-Induced Redistribution of Hydrogen Implanted at Elevated Temperature into Crystalline Silicon. R.D.Verda, M.Nastasi, R.W.Bower: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 927-31