The penetration of H into p-Si, and the formation of H-containing defects during wet chemical etching, were simulated. It was shown that H-distribution relaxation after etching was important in crystals with a low trap concentration. Consideration of such relaxation made it possible to describe all of the experimental profiles without assuming that the H diffusivity was anomalously high. The experimental profiles could also be described by assuming that the H diffusivity was high; with the effect of relaxation being less important here. It was shown that a comparative analysis of concentration profiles for H-containing centers made it possible to determine the number of H atoms in these centers in the case where the profiles were formed mainly during etching or were significantly modified by transient H.

Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching. O.V.Feklisova, E.B.Yakimov, N.A.Yarykin: Semiconductors, 2002, 36[3], 282-5