A theoretical study was made of the effect of C on In diffusion and activation. A kick-out type model was considered for the defect-driven migration of both species, and it was assumed that InC complexes formed via interaction between defect-impurity pairs and substitutional species. A double-level activation model was introduced in order to calculate the active fraction of the diffusion profiles. Parameters for In were derived from ab initio calculations and by fitting experimental diffusion profiles.

Role of the Indium–Carbon Interaction on In Diffusion and Activation in Si. A.La Magna, S.Scalese, P.Alippi, G.Mannino, V.Privitera, M.Bersani, C.Zechner: Applied Physics Letters, 2003, 83[10], 1956-8