model for P diffusion via the dual pair mechanism. It was demonstrated that allowances made for sinks of self-interstitials led to retardation of enhanced P diffusion in the low-content region in the tail of the concentration profile. The influence of sinks was most marked when the position of their peak concentration was in the region of peak generation of self-interstitials within the diffusion layer.

The Influence of Sinks of Intrinsic Point Defects on Phosphorus Diffusion in Si. O.V.Aleksandrov: Semiconductors, 2002, 36[11], 1260-6