The mechanism of Cu diffusion over a clean Si(110) surface was studied by means of Auger electron spectroscopy and low-energy electron diffraction at 500 to 650C. It was shown that Cu transport over the Si(110) surface proceeded via Cu atom diffusion through the Si bulk, and Cu atom segregation at the surface during diffusion.

Mechanism of Copper Diffusion over the Si(110) Surface. A.E.Dolbak, R.A.Zhachuk, B.Z.Olshanetsky: Semiconductors, 2002, 36[9], 958-61