The effect of a change in the electron sub-system of a single crystal, caused by the electric-field-assisted transfer of impurity atoms, on the features of electroplastic deformation in Si was studied. The new method of action upon the motion of dislocations revealed a considerable decrease in the yield point and an increase in the general plasticity as compared to those observed in the material deformed by traditional methods.

Features of the Electrodiffusion-Plastic Deformation of Silicon. M.A.Aliev, K.O.Alieva, V.V.Seleznev, B.G.Aliev, S.R.Mutalibov: Technical Physics Letters, 2002, 28[2], 93-5