Crystals of n-Si material, grown using the float-zone method with a P concentration of about 6 x 1013/cm3, and irradiated with 2MeV electrons and 25MeV protons were studied. It was shown that the kinetics of isochronal annealing of A-centers and divacancies depended, in a complicated manner, upon the energy, dose and temperature of irradiation. That is, the kinetics depended upon the relationship between the concentrations of various radiation defects and on the charge state of reacting primary radiation defects when they interacted with each other, with impurity atoms and with disordered regions. An increase in the concentration of divacancies at 180 to 210C was attributed to the dissociation of disordered regions.

Dependence of the Annealing Kinetics of A Centers and Divacancies on Temperature, Particle Energy, and Irradiation Dose for n-Si Crystals. T.A.Pagava: Semiconductors, 2002, 36[10], 1079-82