Results of a combined infra-red absorption and deep-level transient spectroscopic study of defects induced by irradiation with fast electrons in Sn-doped Czochralski-grown Si crystals were reported. It was found that  Sn atoms interacted effectively with vacancies as well as with interstitial-type radiation-induced defects. Signs of stable Sn-vacancy and Sn-interstitial C atom complexes were observed in deep-level transient spectroscopy and infra-red absorption spectra. Defect transformations during heat-treatment of the irradiated samples were studied. The Sn atoms were found to be effective traps for mobile vacancy-O (V-O) complexes. A local vibrational mode of the Sn-V-O complex was identified.

Defect-Impurity Interactions in Irradiated Tin-Doped Cz-Si Crystals. L.I.Khirunenko, O.A.Kobzar, Y.V.Pomozov, M.G.Sosnin, N.A.Tripachko, V.P.Markevich, L.I.Murin, A.R.Peaker: Physica Status Solidi C, 2003, 0[2], 694-7