Low-doped n-type float zone Si was irradiated with 600 keV electrons to fluences from 2 x 1013 to 1015/cm2. Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods – the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results showed that, in the vicinity of the anode junction, the profile of vacancy-related defect centers was strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile could be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy.

Radiation Defect Distribution in Silicon Irradiated with 600keV Electrons. P.Hazdra, H.Dorschner: Nuclear Instruments and Methods in Physics Research B, 2003, 201[3], 513-9