A systematic study was made of the isochronal annealing of electron-irradiated microcrystalline Si thin films, using a set of complementary characterization techniques. These were electrically detected magnetic resonance, steady-state and modulated photocurrent, constant photocurrent methods and steady-state photo-carrier gratings. These techniques permitted monitoring of the evolution of defect densities, optical absorption, as well as transport and electronic properties such as dark conductivity, mobility–lifetime product of electrons and ambipolar diffusion length. It was shown how and to what extent defects could be removed during subsequent isochronal annealing steps. Although the hole transport properties were restored by annealing, the values of the electron transport properties remained deteriorated.

Defects and Transport Properties of Electron-Irradiated Microcrystalline Silicon with Successive Annealing. W.Bronner, J.P.Kleider, R.Brüggemann, M.Mehring: Thin Solid Films, 2003, 427[1-2], 51-5