Formation processes and characteristics of platelet-like extended defects in FZ Si under bombardment with low-energy H+ ions were examined, and the results were compared with those from He+ ion and high-energy electron irradiation. Silicon discs with (011) surfaces were bombarded with 5keV H+, 10keV He+ ions between 570 and 870K, and by 1000keV electrons between 470 and 670K. It was deduced, from the temperature dependence of the characteristics of extended defects produced by H+ ion irradiation, that the interaction between self-interstitial atoms and H became weak above 770K. The formation of {113} interstitial-type defects was enhanced by H and He, and its extent was greater for H. It was concluded, from the difference between aspect ratios of {113} defects induced by the irradiation with both kinds of ions, that the mechanism for enhancement by H was different from that for He.

Comparison among the Formation Processes of Extended Defects in Si under Irradiation with Low-Energy H+, He+ Ions and High-Energy Electrons. K.Arakawa, K.Saitoh, H.Mori, K.Ono: Nuclear Instruments and Methods in Physics Research B, 2003, 206, 76-80